characteristic typical min/max ta= 25 oc ta = -55 oc to +85 oc frequency 10 - 200 mhz 30 - 200 mhz typical intermodulation performance at 25 oc second order harmonic intercept point ....... +61 dbm (typ.) second order two tone intercept point ........ +55 dbm (typ.) third order two tone intercept point ............ +40 dbm (typ.) legend +25 oc +85 oc - - - - - - -55 oc power vdc +12 +12 ma 30 33 max. rf amplifier model tm7212pm available as: tm7212pm, 4 pin to-8 (t4) TN7212PM, 4 pin surface mount (sm3) fp7212pm, 4 pin flatpack (fp4) bx7212pm, connectorized housing (h1) features ! ! ! ! ! superior phase noise performance ! ! ! ! ! low noise figure: 1.8 db typical ! ! ! ! ! lower +12 vdc supply ! ! ! ! ! operating temp. -55 oc to +85 oc note: care should always be taken to effectively ground the case of each unit. noise figure (db) 1.8 3.0 max. vswr in <1.75:1 2.0:1 max. out <1.35:1 2.0:1 max. reverse isolation (db) -12 -11 max. power @ 1 db comp. (dbm) +20 +19 min. gain (db) 8.5 7.5 min. specifications typical performance data rev. 3/12/09 phase noise (dbc/hz) 2.0 1.5 1.0 2.0 1.5 1.0 1 3 2 10 8 6 + 23 0 -5 -10 -15 -20 start 30 mhz stop 200 mhz start 30 mhz stop 200 mhz start 30 mhz stop 200 mhz start 30 mhz stop 200 mhz start 30 mhz stop 200 mhz start 30 mhz stop 200 mhz 7 9 + 21 + 20 + 19 + 22 gain (db) noise figure (db) 1 db comp. (dbm) input vswr output vswr reverse isolation (db) 10k 1k 100k 100 1m -140 -150 -160 -170 -180 -130 _________guarantee __ __ __ __typical -190 phase noise test conditions: carrier frequency: 100 mhz power output: +20 dbm temperature: 25 oc agilent es5500 system frequency typical 100 hz 1 khz 10 khz 100 khz 1 mhz guarantee (min.) -168 -174 -177 -175 -172 -178 -180 -181 -179 -176 guaranteed phase noise performance (dbc/hz) spectrum microwave 2144 franklin drive n.e. palm bay, florida 32905 ph (888) 553-7531 fax (888) 553-7532 spectrum microwave 2707 black lake place philadelphia, pennsylvania 19154 ph (215) 464-4000 fax (215) 464-4001 www.spectrummicrowave.com maximum ratings ambient operating temperature.................-55oc to +100 oc storage temperature.................................-62oc to +125 oc case temperature..................................................+125 oc dc voltage..........................................................+15 volts continuous rf input power...................................+15 dbm short term rf input power...... 50 milliwatts (1 minute max.) maximum peak power.................... 0.5 watt (3 sec max.) thermal resistance (theta j c) ....................... 81 oc/watt junction temperature rise above the case temp........+24oc maximum operating junction temperature...............+109oc maximum junction temperature of die.....................+205oc mtbf calculation for ground benign environment @ 25 oc .................................................4,067,101.04 hrs
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